Abstract
We present power and temperature dependent photoluminescence measurement of two types of InP/GaInP self-assembled quantum dots. In order to investigate the relaxation and recombination mechanism in these structures, time resolved measurements were performed. The behaviour of the decay times as a function of power and temperature can be explained as type II quantum dot behaviour. To examine the properties of a single quantum dot we have structured the samples with mesas of different sizes to reduce the amount of optically active dots. The photoluminescence results of these experiments are also discussed here.
| Original language | English |
|---|---|
| Pages (from-to) | 1197-1200 |
| Number of pages | 4 |
| Journal | Physica Status Solidi C: Conferences |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2003 |
| Event | 2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan Duration: 30 Sept 2002 → 3 Oct 2002 |
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