The role of fluence in determining the response of thin molybdenum films to ultrashort laser irradiation; from laser-induced crystallization to ablation via photomechanical ablation and nanostructure formation

The selective processing of Mo at low temperatures is challenging, especially in advanced manufacturing on flexible and heat-sensitive substrate due to its higher melting temperature. The key role of fluence in determining the response of thin Mo films to ultrashort laser irradiation is considered in this study. At low fluences, the electrical properties of Mo are enhanced by a localized laser-induced crystallization mechanism; the electrical mobility of Mo is increased and the contact resistance between Mo-Si interface is reduced. At higher fluences, selective patterning of Mo proceeds without impacting the Si layer and the threshold fluence for ablation increases with the film thickness of Mo. Two fluence dependent ablation mechanisms are observed depending on the Mo film thickness. For thin films of thicknesses 20 nm and 40 nm, selective ablation proceeds only by a photothermal interaction. For 60 nm and 80 nm thick films, selective ablation proceeds by both photomechanical and photothermal interactions at two-separate higher fluence regimes, respectively. Interestingly, between these two ablation regimes, a non-ablative nanostructuring regime occurs. The study provides a concise overview of the process window for implementing the laser-induced modifications to Mo layers with minimal impact to the substrate using single wavelength ultrashort pulse laser.