Temperature dependent/spectroscopic studies of the electron delocalization dynamics of excited Ce ions in the wide band gap insulator, Lu 2SiO5

E. Van der Kolk; S. A. Basun; G. F. Imbusch; W. M. Yen

doi:10.13025/24416

Temperature dependent/spectroscopic studies of the electron delocalization dynamics of excited Ce ions in the wide band gap insulator, Lu ₂SiO₅

E. Van der Kolk
, S. A. Basun
, G. F. Imbusch
, W. M. Yen

Physics

Delft University of Technology
Ioffe Physico-Technical Institute
University of Georgia

Research output: Contribution to a Journal (Peer & Non Peer) › Article › peer-review

68 Citations (Scopus)

Abstract

An investigation on the electron delocalization processes of optically excited states of Ce³⁺ impurities in Lu₂SiO₅ was performed. The temperature and spectrally resolved photoconductivity study was used for the purpose. It was found that by monitoring separately the strength of the photocurrent, three different delocalization processes namely direct photoionization, tunneling and thermal ionization were identified.

Original language	English
Pages (from-to)	1740-1742
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	9
DOIs	https://doi.org/10.13025/24416 https://doi.org/10.1063/1.1603337
Publication status	Published - 1 Sep 2003

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10.13025/24416Licence: CC BY-NC-ND
10.1063/1.1603337

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title = "Temperature dependent/spectroscopic studies of the electron delocalization dynamics of excited Ce ions in the wide band gap insulator, Lu 2SiO5",

abstract = "An investigation on the electron delocalization processes of optically excited states of Ce3+ impurities in Lu2SiO5 was performed. The temperature and spectrally resolved photoconductivity study was used for the purpose. It was found that by monitoring separately the strength of the photocurrent, three different delocalization processes namely direct photoionization, tunneling and thermal ionization were identified.",

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AU - Van der Kolk, E.

AU - Basun, S. A.

AU - Imbusch, G. F.

AU - Yen, W. M.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - An investigation on the electron delocalization processes of optically excited states of Ce3+ impurities in Lu2SiO5 was performed. The temperature and spectrally resolved photoconductivity study was used for the purpose. It was found that by monitoring separately the strength of the photocurrent, three different delocalization processes namely direct photoionization, tunneling and thermal ionization were identified.

AB - An investigation on the electron delocalization processes of optically excited states of Ce3+ impurities in Lu2SiO5 was performed. The temperature and spectrally resolved photoconductivity study was used for the purpose. It was found that by monitoring separately the strength of the photocurrent, three different delocalization processes namely direct photoionization, tunneling and thermal ionization were identified.

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UR - https://www.scopus.com/pages/publications/0141605067

U2 - 10.13025/24416

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Temperature dependent/spectroscopic studies of the electron delocalization dynamics of excited Ce ions in the wide band gap insulator, Lu ₂SiO₅

Abstract

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