Temperature dependent/spectroscopic studies of the electron delocalization dynamics of excited Ce ions in the wide band gap insulator, Lu 2SiO5

E. Van der Kolk, S. A. Basun, G. F. Imbusch, W. M. Yen

Research output: Contribution to a Journal (Peer & Non Peer)Articlepeer-review

67 Citations (Scopus)

Abstract

An investigation on the electron delocalization processes of optically excited states of Ce3+ impurities in Lu2SiO5 was performed. The temperature and spectrally resolved photoconductivity study was used for the purpose. It was found that by monitoring separately the strength of the photocurrent, three different delocalization processes namely direct photoionization, tunneling and thermal ionization were identified.

Original languageEnglish
Pages (from-to)1740-1742
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number9
DOIs
Publication statusPublished - 1 Sep 2003

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