Abstract
The integrated photoluminescence (PL) intensities of both ordered and disordered epilayers of InGaP grown on GaAs have been measured as a function of temperature. The highest PL efficiency occurs in the most disordered sample. We find that the PL intensities can drop from 2 to almost 4 orders of magnitude between 12 and 280 K. The samples show an Arrhenius behavior characterized by two activation energies. Below 100 K the activation energies lie in the region of 10-20 meV. Above 100 K the activation energy is approximately 50 meV except in the most disordered sample where it increases to 260 meV We conclude that the low-temperature PL efficiency is most likely controlled by carrier thermalization from spatial fluctuations of the band edges followed by nonradiative recombination. At higher temperatures the PL efficiency is dominated by a nonradiative path whose characteristic activation energy and transition probability depend upon the degree of sublattice ordering.
| Original language | English (Ireland) |
|---|---|
| Pages (from-to) | 73-75 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 65 |
| Issue number | 1 |
| Publication status | Published - 1 Jul 1994 |
Authors (Note for portal: view the doc link for the full list of authors)
- Authors
- LAMBKIN, JD,CONSIDINE, L,WALSH, S,OCONNOR, GM,MCDONAGH, CJ,GLYNN, TJ