Temperature dependence of InP/GaInP quantum dot photoluminescence

G. J. Beirne; I. L. Farrell; C. M. Grogan; J. O. Connolly; G. M. O'Connor; T. J. Glynn; K. K. Thomas; J. D. Lambkin

doi:10.1016/S0167-9317(99)00465-7

Temperature dependence of InP/GaInP quantum dot photoluminescence

G. J. Beirne, I. L. Farrell, C. M. Grogan, J. O. Connolly, G. M. O'Connor, T. J. Glynn, K. K. Thomas, J. D. Lambkin

Physics

Research output: Contribution to a Journal (Peer & Non Peer) › Conference article › peer-review

3 Citations (Scopus)

Abstract

The integrated photoluminescence (PL) intensities of capped InP/GaInP quantum dot structures have been measured as a function of temperature. The PL is found to decrease by up to four orders of magnitude as the temperature is raised from 18 to 300 K. The temperature data show an Arrhenius behaviour characterised by three activation energies. Analysis of this dependence indicates that the major loss mechanism is thermal activation of excitons out of the dots, followed by nonradiative recombination in the barriers. Identical samples were grown without a capping layer in order to study the morphology of the dots using an atomic force microscope (AFM).

Original language	English
Pages (from-to)	73-78
Number of pages	6
Journal	Microelectronic Engineering
Volume	51
DOIs	https://doi.org/10.1016/S0167-9317(99)00465-7
Publication status	Published - May 2000
Event	LDSD'99: 3rd International Conference on Low Dimensional Structures and Devices - Antalya, Turkey Duration: 15 Sep 1999 → 17 Sep 1999

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10.1016/S0167-9317(99)00465-7

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@article{e9a68fa64d2746318d54f0efb6bd83f4,

title = "Temperature dependence of InP/GaInP quantum dot photoluminescence",

abstract = "The integrated photoluminescence (PL) intensities of capped InP/GaInP quantum dot structures have been measured as a function of temperature. The PL is found to decrease by up to four orders of magnitude as the temperature is raised from 18 to 300 K. The temperature data show an Arrhenius behaviour characterised by three activation energies. Analysis of this dependence indicates that the major loss mechanism is thermal activation of excitons out of the dots, followed by nonradiative recombination in the barriers. Identical samples were grown without a capping layer in order to study the morphology of the dots using an atomic force microscope (AFM).",

author = "Beirne, \{G. J.\} and Farrell, \{I. L.\} and Grogan, \{C. M.\} and Connolly, \{J. O.\} and O'Connor, \{G. M.\} and Glynn, \{T. J.\} and Thomas, \{K. K.\} and Lambkin, \{J. D.\}",

year = "2000",

month = may,

doi = "10.1016/S0167-9317(99)00465-7",

language = "English",

volume = "51",

pages = "73--78",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

note = "LDSD'99: 3rd International Conference on Low Dimensional Structures and Devices ; Conference date: 15-09-1999 Through 17-09-1999",

}

TY - JOUR

T1 - Temperature dependence of InP/GaInP quantum dot photoluminescence

AU - Beirne, G. J.

AU - Farrell, I. L.

AU - Grogan, C. M.

AU - Connolly, J. O.

AU - O'Connor, G. M.

AU - Glynn, T. J.

AU - Thomas, K. K.

AU - Lambkin, J. D.

PY - 2000/5

Y1 - 2000/5

N2 - The integrated photoluminescence (PL) intensities of capped InP/GaInP quantum dot structures have been measured as a function of temperature. The PL is found to decrease by up to four orders of magnitude as the temperature is raised from 18 to 300 K. The temperature data show an Arrhenius behaviour characterised by three activation energies. Analysis of this dependence indicates that the major loss mechanism is thermal activation of excitons out of the dots, followed by nonradiative recombination in the barriers. Identical samples were grown without a capping layer in order to study the morphology of the dots using an atomic force microscope (AFM).

AB - The integrated photoluminescence (PL) intensities of capped InP/GaInP quantum dot structures have been measured as a function of temperature. The PL is found to decrease by up to four orders of magnitude as the temperature is raised from 18 to 300 K. The temperature data show an Arrhenius behaviour characterised by three activation energies. Analysis of this dependence indicates that the major loss mechanism is thermal activation of excitons out of the dots, followed by nonradiative recombination in the barriers. Identical samples were grown without a capping layer in order to study the morphology of the dots using an atomic force microscope (AFM).

UR - http://www.scopus.com/inward/record.url?scp=0033699828&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(99)00465-7

DO - 10.1016/S0167-9317(99)00465-7

M3 - Conference article

AN - SCOPUS:0033699828

SN - 0167-9317

VL - 51

SP - 73

EP - 78

JO - Microelectronic Engineering

JF - Microelectronic Engineering

T2 - LDSD'99: 3rd International Conference on Low Dimensional Structures and Devices

Y2 - 15 September 1999 through 17 September 1999

ER -

Temperature dependence of InP/GaInP quantum dot photoluminescence

Abstract

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