Abstract
In this paper we formulate and analyse moving-boundary problems arising from the dissociative model for impurity diffusion in a semiconductor. We consider one-dimensional surface-source and implant problems and two-dimensional diffusion under a mask edge. The diffused profiles which result exhibit a number of novel features.
| Original language | English (Ireland) |
|---|---|
| Pages (from-to) | 1-27 |
| Number of pages | 27 |
| Journal | JOURNAL OF ENGINEERING MATHEMATICS |
| Volume | 31 |
| Issue number | 1 |
| Publication status | Published - 1 Jan 1997 |
Keywords
- Diffusion
- Impurity
- Mask edge
- Moving boundary
- Semiconductor
Authors (Note for portal: view the doc link for the full list of authors)
- Authors
- King, JR,Meere, MG