Abstract
The technique of Raman scattering, at room temperature, is used to investigate the effect of H2S passivation of the surface of n-type GaAs. Well-defined LO, L- and L+ features are distinguished in spectra which have been recorded in z(x, y)zBAR scattering orientation. It is observed that the ratio of the LO to L- peak is reduced by the effects of the passivation process and that the shift of the L+ feature from the laser line is decreased. This latter effect, it is suggested, is caused by a decrease in free-carrier concentration due to donor neutralization by hydrogen during passivation. This neutralization effect will also affect the LO to L- ratio and so complicate a quantitative analysis of the influence of passivation on the surface barrier potential.
| Original language | English (Ireland) |
|---|---|
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 50 |
| Publication status | Published - 1 Jun 1991 |
Authors (Note for portal: view the doc link for the full list of authors)
- Authors
- OCONNOR, GM,MCDONAGH, CJ,ANDERSON, FG,GLYNN, TJ,MORGAN, GP,HUGHES, GJ,ROBERTS, L,HENRY, MO