Raman characterization of passivated GaAs surfaces

G. M. O'Connor; C. J. McDonagh; F. G. Anderson; T. J. Glynn; G. P. Morgan; G. J. Hughes; L. Roberts; M. O. Henry

doi:10.1016/0169-4332(91)90189-Q

Raman characterization of passivated GaAs surfaces

G. M. O'Connor
, C. J. McDonagh
, F. G. Anderson
, T. J. Glynn
, G. P. Morgan
, G. J. Hughes
, L. Roberts
, M. O. Henry

Physics

University of Galway
Dublin City University

Research output: Contribution to a Journal (Peer & Non Peer) › Article › peer-review

2 Citations (Scopus)

Abstract

The technique of Raman scattering at room temperature, is used to investigate the effect of H₂S passivation of the surface of n-type GaAs. Well-defined LO, L^- and L⁺ features are distinguished in spectra which have been recorded in z(x, y)[ovbar|zovbar] scatte ring orientation. It is observed that the ratio of the LO to L^- peak is reduced by the effects of the passivation process and that the shift of the L⁺ feature from the laser line is decreased. This latter effect, it is suggested, is caused by a decrease in free-carrier concentration due to donor neutralization by hydrogen during passivation. This neutralization effect will also affect the LO to L^- ratio and so complicate a quantitative analysis of the influence of passivation on the surface barrier potential.

Original language	English
Pages (from-to)	312-316
Number of pages	5
Journal	Applied Surface Science
Volume	50
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(91)90189-Q
Publication status	Published - 2 Jun 1991

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title = "Raman characterization of passivated GaAs surfaces",

abstract = "The technique of Raman scattering at room temperature, is used to investigate the effect of H2S passivation of the surface of n-type GaAs. Well-defined LO, L- and L+ features are distinguished in spectra which have been recorded in z(x, y)[ovbar|zovbar] scatte ring orientation. It is observed that the ratio of the LO to L- peak is reduced by the effects of the passivation process and that the shift of the L+ feature from the laser line is decreased. This latter effect, it is suggested, is caused by a decrease in free-carrier concentration due to donor neutralization by hydrogen during passivation. This neutralization effect will also affect the LO to L- ratio and so complicate a quantitative analysis of the influence of passivation on the surface barrier potential.",

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year = "1991",

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doi = "10.1016/0169-4332(91)90189-Q",

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TY - JOUR

T1 - Raman characterization of passivated GaAs surfaces

AU - O'Connor, G. M.

AU - McDonagh, C. J.

AU - Anderson, F. G.

AU - Glynn, T. J.

AU - Morgan, G. P.

AU - Hughes, G. J.

AU - Roberts, L.

AU - Henry, M. O.

PY - 1991/6/2

Y1 - 1991/6/2

N2 - The technique of Raman scattering at room temperature, is used to investigate the effect of H2S passivation of the surface of n-type GaAs. Well-defined LO, L- and L+ features are distinguished in spectra which have been recorded in z(x, y)[ovbar|zovbar] scatte ring orientation. It is observed that the ratio of the LO to L- peak is reduced by the effects of the passivation process and that the shift of the L+ feature from the laser line is decreased. This latter effect, it is suggested, is caused by a decrease in free-carrier concentration due to donor neutralization by hydrogen during passivation. This neutralization effect will also affect the LO to L- ratio and so complicate a quantitative analysis of the influence of passivation on the surface barrier potential.

AB - The technique of Raman scattering at room temperature, is used to investigate the effect of H2S passivation of the surface of n-type GaAs. Well-defined LO, L- and L+ features are distinguished in spectra which have been recorded in z(x, y)[ovbar|zovbar] scatte ring orientation. It is observed that the ratio of the LO to L- peak is reduced by the effects of the passivation process and that the shift of the L+ feature from the laser line is decreased. This latter effect, it is suggested, is caused by a decrease in free-carrier concentration due to donor neutralization by hydrogen during passivation. This neutralization effect will also affect the LO to L- ratio and so complicate a quantitative analysis of the influence of passivation on the surface barrier potential.

UR - https://www.scopus.com/pages/publications/0026413511

U2 - 10.1016/0169-4332(91)90189-Q

DO - 10.1016/0169-4332(91)90189-Q

M3 - Article

SN - 0169-4332

VL - 50

SP - 312

EP - 316

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Raman characterization of passivated GaAs surfaces

Abstract

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