Optical characterization of GaAs quantum wire microcrystals

G. P. Morgan; K. Ogawa; K. Hiruma; H. Kakibayashi; T. Katsuyama

doi:10.1016/0038-1098(91)90188-2

Optical characterization of GaAs quantum wire microcrystals

G. P. Morgan
, K. Ogawa
, K. Hiruma
, H. Kakibayashi
, T. Katsuyama

Hitachi, Ltd.

Research output: Contribution to a Journal (Peer & Non Peer) › Article › peer-review

29 Citations (Scopus)

Abstract

Optical properties of quantum-size GaAs wire crystals grown by organometallic vapor-phase epitaxy (OMVPE) are measured. The typical size of the wire-shaped microcrystals is 1-5 μm long and 10-200 nm wide. Photoluminescence measurements at 4 K reveal spectral features dominated by free carrier to acceptor impurity recombination. A free exciton recombination line is also observed and is more intense relative to other features than that observed from a conventional OMVPE epitaxially grown layer. Small spectral shifts (0.5 meV) of the free exciton and the acceptor-bound exciton recombination lines are considered to be due to the effects of quantum confinement on the energy levels of the system.

Original language	English
Pages (from-to)	235-238
Number of pages	4
Journal	Solid State Communications
Volume	80
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(91)90188-2
Publication status	Published - Oct 1991
Externally published	Yes

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title = "Optical characterization of GaAs quantum wire microcrystals",

abstract = "Optical properties of quantum-size GaAs wire crystals grown by organometallic vapor-phase epitaxy (OMVPE) are measured. The typical size of the wire-shaped microcrystals is 1-5 μm long and 10-200 nm wide. Photoluminescence measurements at 4 K reveal spectral features dominated by free carrier to acceptor impurity recombination. A free exciton recombination line is also observed and is more intense relative to other features than that observed from a conventional OMVPE epitaxially grown layer. Small spectral shifts (0.5 meV) of the free exciton and the acceptor-bound exciton recombination lines are considered to be due to the effects of quantum confinement on the energy levels of the system.",

author = "Morgan, \{G. P.\} and K. Ogawa and K. Hiruma and H. Kakibayashi and T. Katsuyama",

year = "1991",

month = oct,

doi = "10.1016/0038-1098(91)90188-2",

language = "English",

volume = "80",

pages = "235--238",

journal = "Solid State Communications",

issn = "0038-1098",

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TY - JOUR

T1 - Optical characterization of GaAs quantum wire microcrystals

AU - Morgan, G. P.

AU - Ogawa, K.

AU - Hiruma, K.

AU - Kakibayashi, H.

AU - Katsuyama, T.

PY - 1991/10

Y1 - 1991/10

N2 - Optical properties of quantum-size GaAs wire crystals grown by organometallic vapor-phase epitaxy (OMVPE) are measured. The typical size of the wire-shaped microcrystals is 1-5 μm long and 10-200 nm wide. Photoluminescence measurements at 4 K reveal spectral features dominated by free carrier to acceptor impurity recombination. A free exciton recombination line is also observed and is more intense relative to other features than that observed from a conventional OMVPE epitaxially grown layer. Small spectral shifts (0.5 meV) of the free exciton and the acceptor-bound exciton recombination lines are considered to be due to the effects of quantum confinement on the energy levels of the system.

AB - Optical properties of quantum-size GaAs wire crystals grown by organometallic vapor-phase epitaxy (OMVPE) are measured. The typical size of the wire-shaped microcrystals is 1-5 μm long and 10-200 nm wide. Photoluminescence measurements at 4 K reveal spectral features dominated by free carrier to acceptor impurity recombination. A free exciton recombination line is also observed and is more intense relative to other features than that observed from a conventional OMVPE epitaxially grown layer. Small spectral shifts (0.5 meV) of the free exciton and the acceptor-bound exciton recombination lines are considered to be due to the effects of quantum confinement on the energy levels of the system.

UR - https://www.scopus.com/pages/publications/0026240957

U2 - 10.1016/0038-1098(91)90188-2

DO - 10.1016/0038-1098(91)90188-2

M3 - Article

SN - 0038-1098

VL - 80

SP - 235

EP - 238

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Optical characterization of GaAs quantum wire microcrystals

Abstract

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