Optical and electrical characterisation of He plasma sputtered n-GaAs

M. Murtagh; S. Hildebrandt; P. A.F. Herbert; G. M. O'Connor; G. M. Crean; F. D. Auret; S. A. Goodman; G. Myburg; W. E. Meyer

Optical and electrical characterisation of He plasma sputtered n-GaAs

M. Murtagh
, S. Hildebrandt
, P. A.F. Herbert
, G. M. O'Connor
, G. M. Crean
, F. D. Auret
, S. A. Goodman
, G. Myburg
, W. E. Meyer

Tyndall National Institute

Research output: Contribution to a Journal (Peer & Non Peer) › Conference article › peer-review

2 Citations (Scopus)

Abstract

Optical and electrical parameters of 10¹⁸ cm^-3 n-type GaAs have been studied as a function of three He plasma sputter parameters, namely applied RF power, process pressure and DC bias using photoreflectance (PR), photoluminescence (PL), Raman scattering and ellipsometry optical spectroscopies and surface carrier concentration measurements using capacitance-voltage profiling. The measured optical and electrical response show a strong dependence on power with only a weak dependence upon pressure. However a complex interdependence on all three sputter factors is observed reflecting the complexity of plasma damage phenomenon even for the simple case of an unreactive He gas system.

Original language	English
Pages (from-to)	1961-1966
Number of pages	6
Journal	Materials Science Forum
Volume	196-201
Issue number	pt 4
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: 23 Jul 1995 → 28 Jul 1995

Cite this

@article{7f25b53a94104444bc063dca67974126,

title = "Optical and electrical characterisation of He plasma sputtered n-GaAs",

abstract = "Optical and electrical parameters of 1018 cm-3 n-type GaAs have been studied as a function of three He plasma sputter parameters, namely applied RF power, process pressure and DC bias using photoreflectance (PR), photoluminescence (PL), Raman scattering and ellipsometry optical spectroscopies and surface carrier concentration measurements using capacitance-voltage profiling. The measured optical and electrical response show a strong dependence on power with only a weak dependence upon pressure. However a complex interdependence on all three sputter factors is observed reflecting the complexity of plasma damage phenomenon even for the simple case of an unreactive He gas system.",

author = "M. Murtagh and S. Hildebrandt and Herbert, \{P. A.F.\} and O'Connor, \{G. M.\} and Crean, \{G. M.\} and Auret, \{F. D.\} and Goodman, \{S. A.\} and G. Myburg and Meyer, \{W. E.\}",

year = "1995",

language = "English",

volume = "196-201",

pages = "1961--1966",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

number = "pt 4",

note = "Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) ; Conference date: 23-07-1995 Through 28-07-1995",

}

TY - JOUR

T1 - Optical and electrical characterisation of He plasma sputtered n-GaAs

AU - Murtagh, M.

AU - Hildebrandt, S.

AU - Herbert, P. A.F.

AU - O'Connor, G. M.

AU - Crean, G. M.

AU - Auret, F. D.

AU - Goodman, S. A.

AU - Myburg, G.

AU - Meyer, W. E.

PY - 1995

Y1 - 1995

N2 - Optical and electrical parameters of 1018 cm-3 n-type GaAs have been studied as a function of three He plasma sputter parameters, namely applied RF power, process pressure and DC bias using photoreflectance (PR), photoluminescence (PL), Raman scattering and ellipsometry optical spectroscopies and surface carrier concentration measurements using capacitance-voltage profiling. The measured optical and electrical response show a strong dependence on power with only a weak dependence upon pressure. However a complex interdependence on all three sputter factors is observed reflecting the complexity of plasma damage phenomenon even for the simple case of an unreactive He gas system.

AB - Optical and electrical parameters of 1018 cm-3 n-type GaAs have been studied as a function of three He plasma sputter parameters, namely applied RF power, process pressure and DC bias using photoreflectance (PR), photoluminescence (PL), Raman scattering and ellipsometry optical spectroscopies and surface carrier concentration measurements using capacitance-voltage profiling. The measured optical and electrical response show a strong dependence on power with only a weak dependence upon pressure. However a complex interdependence on all three sputter factors is observed reflecting the complexity of plasma damage phenomenon even for the simple case of an unreactive He gas system.

UR - https://www.scopus.com/pages/publications/0029493106

M3 - Conference article

AN - SCOPUS:0029493106

SN - 0255-5476

VL - 196-201

SP - 1961

EP - 1966

JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 4

T2 - Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)

Y2 - 23 July 1995 through 28 July 1995

ER -

Optical and electrical characterisation of He plasma sputtered n-GaAs

Abstract

Other files and links

Fingerprint

Cite this