Abstract
Optical and electrical parameters of 10(18) cm(-3) n-type GaAs have been studied as a function of three He plasma sputter parameters, namely applied RF power, process pressure and DC bias using photoreflectance (PR), photoluminescence (PL), Raman scattering and ellipsometry optical spectroscopies and surface carrier concentration measurements using capacitance-voltage profiling. The measured optical and electrical response show a strong dependence on power with only a weak dependence upon pressure. However a complex interdependence on all three sputter factors is observed reflecting the complexity of plasma damage phenomenon even for the simple case of an unreactive He gas system.
| Original language | English (Ireland) |
|---|---|
| Number of pages | 5 |
| Journal | Electrochemical Methods In Corrosion Research Vi, Pts 1 And 2 |
| Volume | 196- |
| Publication status | Published - 1 Jan 1995 |
Authors (Note for portal: view the doc link for the full list of authors)
- Authors
- Murtagh, M,Hildebrandt, S,Herbert, PAF,OConnor, GM,Crean, GM,Auret, FD,Goodman, SA,Myburg, G,Meyer, WE,Suezawa, M,KatayamaYoshida, H
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