TY - JOUR
T1 - Online Estimation of the Junction Temperature Based on the Gate Pre-Threshold Voltage in High-Power IGBT Modules
AU - Du, Mingxing
AU - Tang, Yu
AU - Gao, Mengchao
AU - Ouyang, Ziwei
AU - Wei, Kexin
AU - Hurley, William Gerard
N1 - Publisher Copyright:
© 2001-2011 IEEE.
PY - 2019/9
Y1 - 2019/9
N2 - A model for the online estimation of junction temperature based on the gate pre-threshold voltage in high-power insulated-gate bipolar transistors (IGBTs) was proposed. First, the turn-on behavior and temperature dependence of the gate-emitter voltage during the turn-on delay period were studied. It was revealed that the turn-on waveform of the gate-emitter voltage exhibits a point of inflection after which the voltage between the gate and emitter increases significantly; at this point, the relationship between the voltage and the temperature changes from a positive correlation to a negative correlation. Meanwhile, analyses on the basis of semiconductor physics revealed that the negative correlation between gate-emitter voltage and temperature is caused by the temperature dependence of the flatband voltage. Finally, a model for estimating the junction temperature was established based on a combination of the turn-on delay time and the gate prethreshold voltage which is negatively correlated with the temperature, to eliminate the effect of the bus voltage.
AB - A model for the online estimation of junction temperature based on the gate pre-threshold voltage in high-power insulated-gate bipolar transistors (IGBTs) was proposed. First, the turn-on behavior and temperature dependence of the gate-emitter voltage during the turn-on delay period were studied. It was revealed that the turn-on waveform of the gate-emitter voltage exhibits a point of inflection after which the voltage between the gate and emitter increases significantly; at this point, the relationship between the voltage and the temperature changes from a positive correlation to a negative correlation. Meanwhile, analyses on the basis of semiconductor physics revealed that the negative correlation between gate-emitter voltage and temperature is caused by the temperature dependence of the flatband voltage. Finally, a model for estimating the junction temperature was established based on a combination of the turn-on delay time and the gate prethreshold voltage which is negatively correlated with the temperature, to eliminate the effect of the bus voltage.
KW - Flatband voltage
KW - IGBT
KW - junction temperature
KW - pre-threshold voltage
UR - http://www.scopus.com/inward/record.url?scp=85072129239&partnerID=8YFLogxK
U2 - 10.1109/TDMR.2019.2923457
DO - 10.1109/TDMR.2019.2923457
M3 - Article
AN - SCOPUS:85072129239
SN - 1530-4388
VL - 19
SP - 501
EP - 508
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
IS - 3
M1 - 8738867
ER -