Abstract
Experimental one-dimensional intensity and phase images of thick (>200 nm) oxide lines on silicon are presented together with profiles predicted from the waveguide model. Experimental results were obtained with a purpose-built Linnik interference microscope that makes use of phase-shifting interferometry for interferogram analysis. Profiles have been obtained for both TE and TM polarizations for a wide range of focal positions and in both bright-field [type 1(a)] scanning and confocal modes of microscope operation. The results show extremely good agreement despite several simplifying assumptions incorporated into the theoretical model to reduce computing times.
| Original language | English |
|---|---|
| Pages (from-to) | 131-148 |
| Number of pages | 18 |
| Journal | Applied Optics |
| Volume | 35 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 1996 |
| Externally published | Yes |
Keywords
- Integrated circuit metrology
- Interference microscopy
- Profilometry
- Waveguide imaging theory
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