Gallium Nitride led shaping by DPSS laser processing

A. Dixit; D. O'Mahony; F. Parker; H. Howard; A. Conneely; G. M. O'Connor; T. Glynn; P. Maaskant; B. Corbett

Gallium Nitride led shaping by DPSS laser processing

A. Dixit
, D. O'Mahony
, F. Parker
, H. Howard
, A. Conneely
, G. M. O'Connor
, T. Glynn
, P. Maaskant
, B. Corbett

Physics

Research output: Contribution to conference (Published) › Paper › peer-review

Abstract

Gallium Nitride (GaN) free-standing substrate material has attracted considerable attention recently for high quality LED and Laser fabrication due to their better lattice and thermal match with the LED/Laser epi-layers than existing substrates (Sapphire or SiC). However there is still scope for the further development of both the substrate material and the epi-layer LED structures. Here we report on a preliminary investigation of the shaping capabilities of a laser-machining system on GaN LED wafer substrates. The pieces were scribed and shaped using a Nd:YVO4 diode pumped solid state AVIA 355-7000 laser (Coherent). Finally the machining of 2-dimensional scribing patterns in the free-standing wafer materials is discussed.

Original language	English
Pages	365-367
Number of pages	3
Publication status	Published - 2008
Event	ICALEO 2008 - 27th International Congress on Applications of Lasers and Electro-Optics - Temecula, CA, United States Duration: 20 Oct 2008 → 23 Oct 2008

Conference

Conference	ICALEO 2008 - 27th International Congress on Applications of Lasers and Electro-Optics
Country/Territory	United States
City	Temecula, CA
Period	20/10/08 → 23/10/08

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Cite this

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title = "Gallium Nitride led shaping by DPSS laser processing",

abstract = "Gallium Nitride (GaN) free-standing substrate material has attracted considerable attention recently for high quality LED and Laser fabrication due to their better lattice and thermal match with the LED/Laser epi-layers than existing substrates (Sapphire or SiC). However there is still scope for the further development of both the substrate material and the epi-layer LED structures. Here we report on a preliminary investigation of the shaping capabilities of a laser-machining system on GaN LED wafer substrates. The pieces were scribed and shaped using a Nd:YVO4 diode pumped solid state AVIA 355-7000 laser (Coherent). Finally the machining of 2-dimensional scribing patterns in the free-standing wafer materials is discussed.",

author = "A. Dixit and D. O'Mahony and F. Parker and H. Howard and A. Conneely and O'Connor, \{G. M.\} and T. Glynn and P. Maaskant and B. Corbett",

year = "2008",

language = "English",

pages = "365--367",

note = "ICALEO 2008 - 27th International Congress on Applications of Lasers and Electro-Optics ; Conference date: 20-10-2008 Through 23-10-2008",

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TY - CONF

T1 - Gallium Nitride led shaping by DPSS laser processing

AU - Dixit, A.

AU - O'Mahony, D.

AU - Parker, F.

AU - Howard, H.

AU - Conneely, A.

AU - O'Connor, G. M.

AU - Glynn, T.

AU - Maaskant, P.

AU - Corbett, B.

PY - 2008

Y1 - 2008

N2 - Gallium Nitride (GaN) free-standing substrate material has attracted considerable attention recently for high quality LED and Laser fabrication due to their better lattice and thermal match with the LED/Laser epi-layers than existing substrates (Sapphire or SiC). However there is still scope for the further development of both the substrate material and the epi-layer LED structures. Here we report on a preliminary investigation of the shaping capabilities of a laser-machining system on GaN LED wafer substrates. The pieces were scribed and shaped using a Nd:YVO4 diode pumped solid state AVIA 355-7000 laser (Coherent). Finally the machining of 2-dimensional scribing patterns in the free-standing wafer materials is discussed.

AB - Gallium Nitride (GaN) free-standing substrate material has attracted considerable attention recently for high quality LED and Laser fabrication due to their better lattice and thermal match with the LED/Laser epi-layers than existing substrates (Sapphire or SiC). However there is still scope for the further development of both the substrate material and the epi-layer LED structures. Here we report on a preliminary investigation of the shaping capabilities of a laser-machining system on GaN LED wafer substrates. The pieces were scribed and shaped using a Nd:YVO4 diode pumped solid state AVIA 355-7000 laser (Coherent). Finally the machining of 2-dimensional scribing patterns in the free-standing wafer materials is discussed.

UR - https://www.scopus.com/pages/publications/75149164318

M3 - Paper

AN - SCOPUS:75149164318

SP - 365

EP - 367

T2 - ICALEO 2008 - 27th International Congress on Applications of Lasers and Electro-Optics

Y2 - 20 October 2008 through 23 October 2008

ER -

Gallium Nitride led shaping by DPSS laser processing

Abstract

Conference

UN SDGs

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