FUNDAMENTALS OF LASER ASSISTED MICRO- AND NANOTECHNOLOGIES

Gerard O'Connor

FUNDAMENTALS OF LASER ASSISTED MICRO- AND NANOTECHNOLOGIES

Gerard O'Connor

Physics

Research output: Chapter in Book or Conference Publication/Proceeding › Conference Publication › peer-review

Abstract

Expansion of the laser plume into surrounding gas is considered in the range of ambient gas pressure from 0.1 bar to 1 bar using a kinetic approach. Plume is generated by a nanosecond laser pulse irradiating a silicon wafer. Absorption of laser radiation by the silicon wafer, its heating and melting are described by a two-dimensional thermal model. Axisymmetric flow in the laser plume is calculated by the Direct Simulation Monte Carlo method. Collisions between molecules are described by the hard spheres - Larsen-Borgnakke model. Ablation rate is found from the Hertz-Knudsen equation with taking into account of the back flux of atoms re-deposited at the surface from the plume. The purpose of the work is to study the influence of surrounding gas pressure and its chemical composition on the flow patterns and mixture process in the ablation plume and deposition of the ablated material back to the irradiated surface.

Original language	English (Ireland)
Title of host publication	Laser-induced plume expansion from a silicon wafer in a wide range of ambient gas pressure - art. no. 69850P
Number of pages	1
Volume	6985
Publication status	Published - 1 Aug 2008

Authors (Note for portal: view the doc link for the full list of authors)

Authors
Volkov, AN,Lukianov, GA,O'Connor, GM,Veiko, VP

Cite this

@inproceedings{a8d70fa80d1546f49d47f044d5043a46,

title = "FUNDAMENTALS OF LASER ASSISTED MICRO- AND NANOTECHNOLOGIES",

abstract = "Expansion of the laser plume into surrounding gas is considered in the range of ambient gas pressure from 0.1 bar to 1 bar using a kinetic approach. Plume is generated by a nanosecond laser pulse irradiating a silicon wafer. Absorption of laser radiation by the silicon wafer, its heating and melting are described by a two-dimensional thermal model. Axisymmetric flow in the laser plume is calculated by the Direct Simulation Monte Carlo method. Collisions between molecules are described by the hard spheres - Larsen-Borgnakke model. Ablation rate is found from the Hertz-Knudsen equation with taking into account of the back flux of atoms re-deposited at the surface from the plume. The purpose of the work is to study the influence of surrounding gas pressure and its chemical composition on the flow patterns and mixture process in the ablation plume and deposition of the ablated material back to the irradiated surface.",

author = "Gerard O'Connor",

year = "2008",

month = aug,

day = "1",

language = "English (Ireland)",

volume = "6985",

booktitle = "Laser-induced plume expansion from a silicon wafer in a wide range of ambient gas pressure - art. no. 69850P",

}

TY - GEN

T1 - FUNDAMENTALS OF LASER ASSISTED MICRO- AND NANOTECHNOLOGIES

AU - O'Connor, Gerard

PY - 2008/8/1

Y1 - 2008/8/1

N2 - Expansion of the laser plume into surrounding gas is considered in the range of ambient gas pressure from 0.1 bar to 1 bar using a kinetic approach. Plume is generated by a nanosecond laser pulse irradiating a silicon wafer. Absorption of laser radiation by the silicon wafer, its heating and melting are described by a two-dimensional thermal model. Axisymmetric flow in the laser plume is calculated by the Direct Simulation Monte Carlo method. Collisions between molecules are described by the hard spheres - Larsen-Borgnakke model. Ablation rate is found from the Hertz-Knudsen equation with taking into account of the back flux of atoms re-deposited at the surface from the plume. The purpose of the work is to study the influence of surrounding gas pressure and its chemical composition on the flow patterns and mixture process in the ablation plume and deposition of the ablated material back to the irradiated surface.

AB - Expansion of the laser plume into surrounding gas is considered in the range of ambient gas pressure from 0.1 bar to 1 bar using a kinetic approach. Plume is generated by a nanosecond laser pulse irradiating a silicon wafer. Absorption of laser radiation by the silicon wafer, its heating and melting are described by a two-dimensional thermal model. Axisymmetric flow in the laser plume is calculated by the Direct Simulation Monte Carlo method. Collisions between molecules are described by the hard spheres - Larsen-Borgnakke model. Ablation rate is found from the Hertz-Knudsen equation with taking into account of the back flux of atoms re-deposited at the surface from the plume. The purpose of the work is to study the influence of surrounding gas pressure and its chemical composition on the flow patterns and mixture process in the ablation plume and deposition of the ablated material back to the irradiated surface.

M3 - Conference Publication

VL - 6985

BT - Laser-induced plume expansion from a silicon wafer in a wide range of ambient gas pressure - art. no. 69850P

ER -

FUNDAMENTALS OF LASER ASSISTED MICRO- AND NANOTECHNOLOGIES

Abstract

Authors (Note for portal: view the doc link for the full list of authors)

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