FRONTIERS FOR ENGINEERING MATERIALS

Thomas J. Glynn

FRONTIERS FOR ENGINEERING MATERIALS

Thomas J. Glynn

Physics

Research output: Chapter in Book or Conference Publication/Proceeding › Conference Publication › peer-review

Abstract

Laser diodes composed of GaInAs quantum wells (QWs) and InP barriers are of considerable interest because they provide gain in the visible wavelength range 1.3 - 1.55 mu m. By altering the width of the QW region, the emission wavelength can be continuously varied. In the analogous GaInP AlGaInP system, thermal activation of carriers out of the well has been blamed for the poor thermal characteristics of these lasers and has been verified in a careful study of the temperature dependence of the QW luminescence. In this paper, we examine the photoluminescence (PL) intensity as a function of temperature from a range of QWs of various widths.

Original language	English (Ireland)
Title of host publication	Temperature dependence of the luminescence from GaInAs InP quantum wells
Number of pages	5
Volume	118-
Publication status	Published - 1 Nov 1996

Authors (Note for portal: view the doc link for the full list of authors)

Authors
Daly, E,OConnor, G,McDonagh, C,Morgan, GP,Glynn, TJ

Cite this

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title = "FRONTIERS FOR ENGINEERING MATERIALS",

abstract = "Laser diodes composed of GaInAs quantum wells (QWs) and InP barriers are of considerable interest because they provide gain in the visible wavelength range 1.3 - 1.55 mu m. By altering the width of the QW region, the emission wavelength can be continuously varied. In the analogous GaInP AlGaInP system, thermal activation of carriers out of the well has been blamed for the poor thermal characteristics of these lasers and has been verified in a careful study of the temperature dependence of the QW luminescence. In this paper, we examine the photoluminescence (PL) intensity as a function of temperature from a range of QWs of various widths.",

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language = "English (Ireland)",

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T1 - FRONTIERS FOR ENGINEERING MATERIALS

AU - Glynn, Thomas J.

PY - 1996/11/1

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N2 - Laser diodes composed of GaInAs quantum wells (QWs) and InP barriers are of considerable interest because they provide gain in the visible wavelength range 1.3 - 1.55 mu m. By altering the width of the QW region, the emission wavelength can be continuously varied. In the analogous GaInP AlGaInP system, thermal activation of carriers out of the well has been blamed for the poor thermal characteristics of these lasers and has been verified in a careful study of the temperature dependence of the QW luminescence. In this paper, we examine the photoluminescence (PL) intensity as a function of temperature from a range of QWs of various widths.

AB - Laser diodes composed of GaInAs quantum wells (QWs) and InP barriers are of considerable interest because they provide gain in the visible wavelength range 1.3 - 1.55 mu m. By altering the width of the QW region, the emission wavelength can be continuously varied. In the analogous GaInP AlGaInP system, thermal activation of carriers out of the well has been blamed for the poor thermal characteristics of these lasers and has been verified in a careful study of the temperature dependence of the QW luminescence. In this paper, we examine the photoluminescence (PL) intensity as a function of temperature from a range of QWs of various widths.

M3 - Conference Publication

VL - 118-

BT - Temperature dependence of the luminescence from GaInAs InP quantum wells

ER -

FRONTIERS FOR ENGINEERING MATERIALS

Abstract

Authors (Note for portal: view the doc link for the full list of authors)

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