Estimation of parameters in numerical modelling of non‐linear diffusion in semiconductors

A procedure is described for estimating various parameters governing the diffusion of impurities in semiconductors; these parameters are required for a number of explicit numerical models of non‐linear diffusion in III‐V crystals. The method is based on an analytical solution of the continuum equivalent of a discrete numerical model due to Zahari and Tuck and provides a systematic procedure for analysing experimental data to yield predictions for the coefficient of diffusion of the impurity, the coefficient of self‐diffusion of the host material, the bulk equilibrium vacancy concentration and, under conditions of “dissociation” pressure, the surface vacancy concentration. Application of the procedure to two sets of independent experimental data provided reasonably consistent values of the parameters.