Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors

Mingxing Du; Qiuya Guo; Ziwei Ouyang; Kexin Wei; William Gerard Hurley

doi:10.1016/j.csite.2019.100492

Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors

Mingxing Du, Qiuya Guo, Ziwei Ouyang, Kexin Wei, William Gerard Hurley

Electrical & Electronic Engineering

Tianjin University of Technology

Research output: Contribution to a Journal (Peer & Non Peer) › Article › peer-review

15 Citations (Scopus)

Abstract

In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described. Based on the FEA, the transient thermal characteristics of a healthy IGBT module are analyzed. The influence of the size, location and irregular distribution of the solder layer crack on the thermal resistance of the IGBT module is investigated. In addition, the degree of crack damage and the specific location of the solder layer of the IGBT module are evaluated based on the structure function. The conclusions of the study provide theoretical support for IGBT module reliability and life assessment.

Original language	English
Article number	100492
Journal	Case Studies in Thermal Engineering
Volume	14
DOIs	https://doi.org/10.1016/j.csite.2019.100492
Publication status	Published - Sep 2019

Keywords

Finite element analysis(FEA)
Insulated gate bipolar transistor (IGBT)
Solder layer crack
Structure function
Thermal resistance

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10.1016/j.csite.2019.100492

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title = "Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors",

abstract = "In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described. Based on the FEA, the transient thermal characteristics of a healthy IGBT module are analyzed. The influence of the size, location and irregular distribution of the solder layer crack on the thermal resistance of the IGBT module is investigated. In addition, the degree of crack damage and the specific location of the solder layer of the IGBT module are evaluated based on the structure function. The conclusions of the study provide theoretical support for IGBT module reliability and life assessment.",

keywords = "Finite element analysis(FEA), Insulated gate bipolar transistor (IGBT), Solder layer crack, Structure function, Thermal resistance",

author = "Mingxing Du and Qiuya Guo and Ziwei Ouyang and Kexin Wei and Hurley, \{William Gerard\}",

note = "Publisher Copyright: {\textcopyright} 2019 The Authors.",

year = "2019",

month = sep,

doi = "10.1016/j.csite.2019.100492",

language = "English",

volume = "14",

journal = "Case Studies in Thermal Engineering",

issn = "2214-157X",

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TY - JOUR

T1 - Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors

AU - Du, Mingxing

AU - Guo, Qiuya

AU - Ouyang, Ziwei

AU - Wei, Kexin

AU - Hurley, William Gerard

PY - 2019/9

Y1 - 2019/9

N2 - In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described. Based on the FEA, the transient thermal characteristics of a healthy IGBT module are analyzed. The influence of the size, location and irregular distribution of the solder layer crack on the thermal resistance of the IGBT module is investigated. In addition, the degree of crack damage and the specific location of the solder layer of the IGBT module are evaluated based on the structure function. The conclusions of the study provide theoretical support for IGBT module reliability and life assessment.

AB - In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described. Based on the FEA, the transient thermal characteristics of a healthy IGBT module are analyzed. The influence of the size, location and irregular distribution of the solder layer crack on the thermal resistance of the IGBT module is investigated. In addition, the degree of crack damage and the specific location of the solder layer of the IGBT module are evaluated based on the structure function. The conclusions of the study provide theoretical support for IGBT module reliability and life assessment.

KW - Finite element analysis(FEA)

KW - Insulated gate bipolar transistor (IGBT)

KW - Solder layer crack

KW - Structure function

KW - Thermal resistance

UR - https://www.scopus.com/pages/publications/85069227661

U2 - 10.1016/j.csite.2019.100492

DO - 10.1016/j.csite.2019.100492

M3 - Article

AN - SCOPUS:85069227661

SN - 2214-157X

VL - 14

JO - Case Studies in Thermal Engineering

JF - Case Studies in Thermal Engineering

M1 - 100492

ER -

Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors

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Keywords

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