Controlling nanogap quantum dot photoconductivity through optoelectronic trap manipulation

Lauren J. Willis; Jessamyn A. Fairfield; Tali Dadosh; Michael D. Fischbein; Marija Drndic

doi:10.1021/nl9024209

Controlling nanogap quantum dot photoconductivity through optoelectronic trap manipulation

Lauren J. Willis
, Jessamyn A. Fairfield
, Tali Dadosh
, Michael D. Fischbein
, Marija Drndic

University of Pennsylvania

Research output: Contribution to a Journal (Peer & Non Peer) › Article › peer-review

29 Citations (Scopus)

Abstract

Nanoscale devices are being extensively studied for their tunable electronic and optical properties, but the influence of impurities and defects is amplified at these length scales and can lead to poorly understood variations in characteristics of semiconducting materials. By performing a large ensemble of photoconductivity measurements in nanogaps bridged by core-shell CdSe/ZnS semiconductor nanocrystals, we discover optoelectronic methods for affecting solid-state charge trap populations. We introduce a model that unifies previous work and transforms the problem of irreproducibility in nanocrystal electronic properties into a reproducible and robust photocurrent response due to trap state manipulation. Because traps dominate many physical processes, these findings may lead to improved performance and device tunability for various nanoscale applications through the control and optimization of impurities and defects.

Original language	English
Pages (from-to)	4191-4197
Number of pages	7
Journal	Nano Letters
Volume	9
Issue number	12
DOIs	https://doi.org/10.1021/nl9024209
Publication status	Published - 9 Dec 2009
Externally published	Yes

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10.1021/nl9024209

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abstract = "Nanoscale devices are being extensively studied for their tunable electronic and optical properties, but the influence of impurities and defects is amplified at these length scales and can lead to poorly understood variations in characteristics of semiconducting materials. By performing a large ensemble of photoconductivity measurements in nanogaps bridged by core-shell CdSe/ZnS semiconductor nanocrystals, we discover optoelectronic methods for affecting solid-state charge trap populations. We introduce a model that unifies previous work and transforms the problem of irreproducibility in nanocrystal electronic properties into a reproducible and robust photocurrent response due to trap state manipulation. Because traps dominate many physical processes, these findings may lead to improved performance and device tunability for various nanoscale applications through the control and optimization of impurities and defects.",

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T1 - Controlling nanogap quantum dot photoconductivity through optoelectronic trap manipulation

AU - Willis, Lauren J.

AU - Fairfield, Jessamyn A.

AU - Dadosh, Tali

AU - Fischbein, Michael D.

AU - Drndic, Marija

PY - 2009/12/9

Y1 - 2009/12/9

N2 - Nanoscale devices are being extensively studied for their tunable electronic and optical properties, but the influence of impurities and defects is amplified at these length scales and can lead to poorly understood variations in characteristics of semiconducting materials. By performing a large ensemble of photoconductivity measurements in nanogaps bridged by core-shell CdSe/ZnS semiconductor nanocrystals, we discover optoelectronic methods for affecting solid-state charge trap populations. We introduce a model that unifies previous work and transforms the problem of irreproducibility in nanocrystal electronic properties into a reproducible and robust photocurrent response due to trap state manipulation. Because traps dominate many physical processes, these findings may lead to improved performance and device tunability for various nanoscale applications through the control and optimization of impurities and defects.

AB - Nanoscale devices are being extensively studied for their tunable electronic and optical properties, but the influence of impurities and defects is amplified at these length scales and can lead to poorly understood variations in characteristics of semiconducting materials. By performing a large ensemble of photoconductivity measurements in nanogaps bridged by core-shell CdSe/ZnS semiconductor nanocrystals, we discover optoelectronic methods for affecting solid-state charge trap populations. We introduce a model that unifies previous work and transforms the problem of irreproducibility in nanocrystal electronic properties into a reproducible and robust photocurrent response due to trap state manipulation. Because traps dominate many physical processes, these findings may lead to improved performance and device tunability for various nanoscale applications through the control and optimization of impurities and defects.

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DO - 10.1021/nl9024209

M3 - Article

SN - 1530-6984

VL - 9

SP - 4191

EP - 4197

JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

Controlling nanogap quantum dot photoconductivity through optoelectronic trap manipulation

Abstract

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