An Improved Behavior Model for IGBT Modules Driven by Datasheet and Measurement

This article describes an improved behavior model for IGBT modules. The new steady-state characteristic model of the IGBT with a correction function was built to improve the saturation current for different gate-emitter voltages. Two important nonlinear capacitances were described by two continuous functions to solve the convergence problem in the circuit simulation. The parasitic parameters generated by the package were extracted by the impedance measurement. All the parameters of the model are derived from datasheet and measurement. The improved model was implemented by MAST language in SABER circuit simulation. A double-pulse test was applied to verify the improved model. Compared with the conventional model for transient waveforms, switching losses, and electromagnetic interference (EMI), the improved model shows a better agreement with experiments. The satisfactory results indicate that the improved model can offer a simple, fast, and generic modeling approach.