Abstract
The kick-out model for impurity diffusion in semiconductors is studied. The kick-out mechanism is thought to play an important rôle in a number of applications, including the diffusion of zinc and chromium in gallium arsenide. Asymptotic solutions are derived for both one- and two-dimensional surface source problems. In the one-dimensional case, a mechanism for the destruction of self-interstitials is also incorporated. The calculated diffusion profiles have shapes which are typical of diffusion systems in which the kick-out mechanism is believed to be active. For the two-dimensional problem, contours of constant impurity concentration are calculated and some are found to have the 'bird's beak' shape which is frequently observed in experiments.
| Original language | English (Ireland) |
|---|---|
| Pages (from-to) | 546-565 |
| Number of pages | 19 |
| Journal | Z. Angew. Math. Phys. |
| Volume | 46 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1 Jan 1995 |
Authors (Note for portal: view the doc link for the full list of authors)
- Authors
- Meere, M. G. and King, J. R.