A model of the on-state voltage across IGBT modules based on physical structure and conduction mechanisms

Qingyi Kong; Mingxing Du; Ziwei Ouyang; Kexin Wei; William Gerard Hurley

doi:10.3390/en12050851

A model of the on-state voltage across IGBT modules based on physical structure and conduction mechanisms

Qingyi Kong
, Mingxing Du
, Ziwei Ouyang
, Kexin Wei
, William Gerard Hurley

Electrical & Electronic Engineering

Tianjin University of Technology

Research output: Contribution to a Journal (Peer & Non Peer) › Article › peer-review

10 Citations (Scopus)

Abstract

The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

Original language	English
Article number	851
Journal	Energies
Volume	12
Issue number	5
DOIs	https://doi.org/10.3390/en12050851
Publication status	Published - 5 Mar 2019

Keywords

IGBT module
Model
On-state voltage
Separation method

Access to Document

10.3390/en12050851

Cite this

@article{17cca04e065d4d09b833ae510feabd05,

title = "A model of the on-state voltage across IGBT modules based on physical structure and conduction mechanisms",

abstract = "The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.",

keywords = "IGBT module, Model, On-state voltage, Separation method",

author = "Qingyi Kong and Mingxing Du and Ziwei Ouyang and Kexin Wei and Hurley, \{William Gerard\}",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors.",

year = "2019",

month = mar,

day = "5",

doi = "10.3390/en12050851",

language = "English",

volume = "12",

journal = "Energies",

issn = "1996-1073",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "5",

}

TY - JOUR

T1 - A model of the on-state voltage across IGBT modules based on physical structure and conduction mechanisms

AU - Kong, Qingyi

AU - Du, Mingxing

AU - Ouyang, Ziwei

AU - Wei, Kexin

AU - Hurley, William Gerard

PY - 2019/3/5

Y1 - 2019/3/5

N2 - The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

AB - The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

KW - IGBT module

KW - Model

KW - On-state voltage

KW - Separation method

UR - https://www.scopus.com/pages/publications/85065864105

U2 - 10.3390/en12050851

DO - 10.3390/en12050851

M3 - Article

AN - SCOPUS:85065864105

SN - 1996-1073

VL - 12

JO - Energies

JF - Energies

IS - 5

M1 - 851

ER -

A model of the on-state voltage across IGBT modules based on physical structure and conduction mechanisms

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this