5d electron delocalization of Ce3+ and Pr3+ in Y2SiO5 and Lu2SiO5

George F Imbusch

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Abstract

The energies of the 5d excited states of Ce3+ and Pr3+ impurities relative to the conduction band of the insulators Y2SiO5 and Lu2SiO5 were investigated through a temperature and spectrally resolved photoconductivity study. The effective ionization barrier of Pr3+ from the 5d state to the conduction band is found to be 0.15 eV smaller than that of Ce3+ in both Y2SiO5 and Lu2SiO5. The difference is explained by a model, represented by rate equations, that takes into account interconfigurational 4f5d - 4f(2) relaxation for Pr3+, a process that is absent for Ce3+.
Original languageEnglish (Ireland)
JournalPhysical Review B
Volume71
Publication statusPublished - 1 Apr 2005

Authors (Note for portal: view the doc link for the full list of authors)

  • Authors
  • van der Kolk, E,Dorenbos, P,van Eijk, CWE,Basun, SA,Imbusch, GF,Yen, WM

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